Search results for "Vacuum arc"
showing 6 items of 6 documents
Laser irradiation of carbon–tungsten materials
2014
Carbon–tungsten layers deposited on graphite by thermionic vacuum arc (TVA) were directly irradiated with a femtosecond terawatt laser. The morphological and structural changes produced in the irradiated area by different numbers of pulses were systematically explored, both along the spots and in their depths. Although micro-Raman and Synchrotron-x-ray diffraction investigations have shown no carbide formation, they have shown the unexpected presence of embedded nano-diamonds in the areas irradiated with high fluencies. Scanning electron microscopy images show a cumulative effect of the laser pulses on the morphology through the ablation process. The micro-Raman spatial mapping signalled an…
Corrosion resistance of the vacuum arc deposited Ti, TiN and TiO2 coatings on large area glass substrates
2000
An industrial installation for vacuum arc deposition is presented. Its potential in the field of decorative coatings for large area glass sheets is demonstrated. In particular it is possible to deposit patterned coatings through a polymeric textile mask. The ability to deposit uniform multilayer coatings having interference colours onto large silicate glass sheets is shown. Titanium, titanium nitride and titanium dioxide coatings on silicate glass have been characterized in terms of composition and corrosion resistance. Depth profiling was achieved with the aid of Auger electron spectroscopy. The corrosion resistance of TiN coatings is higher than that of TiO 2 . The corrosion resistance of…
Influence of the tip effect of a carbon nanostructure on low current electrical arc initiation
2009
During their setting off, circuit breakers and vacuum switch devices are accompanied by an electric arc whose physical and chemical properties are governed by emissive current sites at the cathode surface called cathode spots. Assuming the continuity of the current on the cathode surfaces, the cathode spots contribute to supply the electrical arc by electron emission and material ejection. Thus they cause erosion on the contact electrodes inducing a dysfunction of contactors. The apparition of these cathode spots is due essentially to dust particles and surface irregularities at different scales. This experimental work represents a contribution to the understanding of the electrical arc beh…
Vacuum arc deposition of protective layers on glass and polymer substrates
2001
Abstract Vacuum arc deposition allows one to deposit various coatings on insulating and temperature-sensitive substrates (like polymers). An advantage of the vacuum arc deposition technique is the low substrate temperature during the deposition process. A vacuum arc deposition apparatus for the coating of large-area substrates has been developed. Ti, TiN, TiO 2 and diamond-like single and multilayer coatings have been deposited on plastic and glass substrates. The vacuum arc technology permits formation of multilayer colour filters of high uniformity on substrates with dimensions up to 2000×1400 mm 2 . The microstructure, chemical composition and optical properties of the deposited coatings…
Formation of cobalt silicide films by ion beam deposition
2006
Abstract Thin films of cobalt silicide are widely used as metallization in very large-scale integrated electronic circuits. In this study, Co ions were deposited on Si(1 1 1) wafers by a high beam current filter metal vacuum arc deposition (FMEVAD) system. Surface silicide films were formed after annealing from 500 to 700 °C for 30 min. The results show that a thin CoSi2 surface layer with both a smooth surface topography and sharp interface can be achieved by annealing at 700 °C. The CoSi phase and O contamination were observed in the samples that were annealed at lower temperatures.
Formation of cobalt silicide from filter metal vacuum arc deposited films
2006
The thermal reaction of Co film deposited on Si(111) surfaces by a high current filter metal vacuum arc (FMEVAD) system has been studied. After deposition the films were annealed over the 400-900 degrees C temperature range for 30 min. Rutherford backscattering spectrometry (RBS) was used to characterize the elemental depth distributions in the films subjected to different annealing temperatures. Ordered chemical phases were determined by glancing-incidence X-ray diffraction (GIXRD) and the morphology was determined by cross section transmission electron microscopy (TEM). The results show that the phases formed are Co2Si at 400 degrees C, CoSi + Coo at 500 degrees C, CoSi + CoSi2 at 600 deg…